Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Prediction and adjustment of point defect (vacancies self-interstitials) distribution in silicon crystals is utmost importance for microelectronic applications. The simulation growth processes widely applied process development quite a few different sets parameters have been proposed. In this paper the transient temperature, thermal stress distributions are simulated 300 mm Czochralski whole crystal including cone cylindrical phases. Simulations with 12 published parameter compared to experimentally measured interstitial–vacancy boundary. results evaluated standard adjusted generally best agreement found models considering effect on equilibrium concentration.